The Effects of the post-annealing temperature on the Growth Mechanism of Bi2Sr2Ca1Cu2O8+∂ thin films


B. Özçelik(Çukurova University), O. Nane(Çukurova University, Hakkari University), D. Abukay(Izmir Institute of Technology)


Abstract:The effects of post-annealing temperature were investigated on Bi2Sr2Ca1Cu2O8+∂ thin films deposited on MgO (100) substrates by pulsed laser deposition (PLD). The structural and superconducting properties of the films have been determined by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), temperature dependent resistivity (R-T), and DC magnetization measurements. The films which were deposited at 600 ºC were post-annealed in an atmosphere of a gas mixture of Ar (%93) and O2 (%7), at temperature ranging between 800-880 ºC. This resulted in films which exhibited a single phase of 2212 with a high crystallinity (FWHM ≈ 0.160) and texturing along the c-axis, perpendicular to the plane of the substrate. An optimum temperature of 860 ºC was found for the post-annealing thermal treatment. The critical temperature, TC, of the films was measured as 82 K and the critical current density, JC, was calculated as 3x107 A/cm2 for the film annealed at 860 ºC.