CVD法で作製したHoBa2Cu3O7-x薄膜のJc特性におけるZr添加効果と強磁場プロセスの効果

Effect of Zr addition and magnetic field process on the Jc property of CVD-HoBa2Cu3O7-x films


張 現平, 淡路 智, 石原 亮輔, 難波 雅史, 西島 元, 渡辺 和雄 (東北大)


Abstract:Effects of Zr addition and magnetic field process on the Jc property of HoBa2Cu3O7-x film deposited by a chemical vapor deposition technique in magnetic fields (in-field CVD) have been investigated. It is found that Zr additions lead to improved in-field critical current density, while a further Jc enhancement along the c-axis of the HoBCO films is obtained in magnetic field processed samples. Detailed characterization and analysis will be presented.