Structure and properties of MgB2 wires by an internal Mg diffusion process (2nd report)
許 子萬 （東大）； 戸叶 一正, 松本 明善, 熊倉 明浩 （NIMS ）； 和田 仁, 木村 薫 （東大）
HUR.Jahmahn*nims.go.jp
Abstract:The highest value of HV hardness in MgB2 bulk reported by Takano et al. was about HV 1700. In Mg diffusion process， it showed almost same or a less values compared with fabricated MgB2 bulk by HIP. These result for HV microhardness of MgB2 by an internal Mg diffusion process were approximately 4 times higher than conventional PIT-processed wire; ex-situ case （≈HV400）. Also， the 10 mol% SiC doped wire showed slightly rather than pure sample under the same condition.