Structure and properties of MgB2 wires by an internal Mg diffusion process (2nd report)
許 子萬 (東大); 戸叶 一正, 松本 明善, 熊倉 明浩 (NIMS ); 和田 仁, 木村 薫 (東大)
HUR.Jahmahn*nims.go.jp
Abstract:The highest value of HV hardness in MgB2 bulk reported by Takano et al. was about HV 1700. In Mg diffusion process, it showed almost same or a less values compared with fabricated MgB2 bulk by HIP. These result for HV microhardness of MgB2 by an internal Mg diffusion process were approximately 4 times higher than conventional PIT-processed wire; ex-situ case (≈HV400). Also, the 10 mol% SiC doped wire showed slightly rather than pure sample under the same condition.