E1-2　DC intrinsic Josephson effect in 1μm-lateral-size Bi-2212 stacks

DC intrinsic Josephson effect in 1μm-lateral-size Bi-2212 stacks

R.I.E.C., Tohoku University^A, IRE, Russian Acad. of Sciences^B

Yu.I.Latyshev^A,B, @V.N.Pavlenko^A,B, S.-J.Kim^A, T.Yamashita^A

　Perfect Bi-2212 stacked junctions with lateral size L ‾ 1 μm, have been fabricated by focused ion beam (FIB) processing of high quality Bi-2212 whiskers. The critical current across the layers Ic shows well resolved Fraunhofer dependence in magnetic field H // ab with a period ‾ 1 T, corresponding to one flux quantum per elementary junction. The trapped flux in H //c is shown to suppress oscillatory dependence of Ic(H//). The possible applications of the junctions as a magnetic field memory cell are discussed.